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| NTE2388 MOSFET N-Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Low rDS(on) to Minimize On-Losses. Specified at Elevated Temperatures. D Rugged - SOA is Power Dissipation Limited D Source-to-Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Peak TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C Maximum Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Maximum Lead Temperature (During soldering, 1/8" from case for 5sec), TL . . . . . . . . . . . . +300C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS ID = 250A, VGS = 0 IDSS VGS = 0, VDS = Max Rating VGS = 0, VDS = 160V, TC = +125C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ON Characteristics (Note 1) Gate Threshold Voltage Static Drain-Source On Resistance On-State Drain Current Forward Transconductance Dynamic Characteristics Input Capactiance Output Capacitance Reverse Transfer Capactiance Switching Characteristics (Note 1) Turn-On Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Forward ON Voltage Forward Turn-On Time Reverse Recovery Time Internal Package Inductance Internal Drain Inductance Ld Measured from the contact screw on tab to center of die Measured from the drain lead 0.25" from package to center of die Internal Source Inductance Ls Measured from the source lead 0.25" from package to source bond pad - - 3.5 4.5 - - nH nH td(on) tr td(off) tf Qg Qgs Qgd VSD ton trr IS = Rated ID, VGS = 0 VDS = 160V, VGS = 10V, ID = Rated ID VDD [ 75V, ID = 10APEAK, Rg = 4.7 - - - - - - - - - - - - - 38 16 22 1.8 450 30 60 80 60 60 - - 2.0 - ns ns ns ns nC nC nC V ns Ciss Coss Crss VDS = 25V, VGS = 0, f = 1MHz - - - - - - 1600 750 300 pf pf pf VGS(th) RDS(on) ID(on) gfs VDS = VGS, ID = 250A VGS = 10V, ID = 10A VGS = 10V, VDS 3.2V VDS 3.2V, ID = 10A 2 - 18 6 - - - - 4 0.18 - - V A mhos IGSSF IGSSR VDS = 0, VGSF = 20V VDS = 0, VGSR = 20V 200 - - - - - - - - - - 200 1000 100 100 V A A nA nA Symbol Test Conditions Min Typ Max Unit Source Drain Diode Characteristics (Note 1) Limited by stray inductance - 7.5 - nH Note 1. Pulse test: Pulse width 300s, Duty cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab |
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